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| MMBTH10 NPN Silicon VHF/UHF Transistor P b Lead(Pb)-Free BASE COLLECTOR 3 1 2 SOT-23 EMITTER MAXIMUM RATINGS (Ta=25 C) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Symbol VCEO VCBO VEBO IC Value 25 30 3.0 50 Unit Vdc Vdc Vdc mAdc THERMAL CHARACTERISTICS Characteristics Total Device Dissipation FR-5 Board(1) TA =25 C Derate above 25 C Thermal Resistance, Junction Ambient Junction and Storage, Temperature Symbol PD R JA TJ, Tstg V alue 225 1.8 556 -55 to +150 Unit mW mW/ C C/W C Device Marking MMBTH10=3EM ELECTRICAL CHARACTERISTICS Characteristics Collector-Emitter Breakdown Voltage (IC= 1.0 mAdc, I B =0) Collector-Base Breakdown Voltage (IC= 100 uAdc, I E =0) Emitter-Base Breakdown Voltage (IE= 10 uAdc, I C=0) Collector Cutoff Current (VCB= 25Vdc, I E=0) Emitter Cutoff Current (VEB= 2.0 V dc, I C =0) 1. FR-5=1.0 I I 0.75 I I 0.062 in Symbol V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO Min 25 30 3.0 Max 100 100 Unit Vdc Vdc Vdc nAdc nAdc WEITRON http://www.weitron.com.tw 1/5 29-Aug-05 MMBTH10 ELECTRICAL CHARACTERISTICS (TA =25 C unless otherwise noted) (Countinued) Characteristics Symbol Min Typ Max Unit ON CHARACTERISTICS DC Current Gain (I C=4.0 mAdc, V CE=10 Vdc) Collector-Emitter Saturation Voltage (IC=4.0 mAdc, I B =0.4 mAdc) Base-Emitter On Voltage (I C =4.0 mVdc, VCE =10 V) h FE V CE(sat) VBE(on) 60 0.5 Vdc - 0.95 Vdc SMALL-SIGNAL CHARACTERISTICS Current-Gain-Bandwidth Product (I C=4.0 mAdc, V CE=10 Vdc, f=100MHz) Collector-Base Capacitance (VCB=10 Vdc, I E =0, f=1.0 MHz) Common-Base Feedback Capacitance (VCB =10 Vdc, IE=0 , f=1.0 MHz) Collector Base Time Constant (I C =4.0 mVdc, V CB =10 Vdc, f=31.8 MHz) fT Ccb C rb rb `C c 650 0.7 MHz PF PF Ps - 0.65 9.0 WEITRON http://www.weitron.com.tw MMBTH10 80 yib, INPUT ADMITTANCE(mmhos) 70 60 50 40 30 20 10 0 100 200 300 400 500 700 1000 0 10 20 30 40 gib(mmhos) 50 60 70 80 ib jb jb(mmhos) 1000 MHz 700 400 200 100 gib 0 FIG.1 Rectangular Form yib, FORWARD TRANSFER ADMITTANCE(mmhos) 70 60 50 30 20 10 0 20 10 fb jb fb(mmhos) 40 bfb 50 100 40 30 60 200 f, FREQUENCY(MHz) FIG.2 Polar Form 400 600 700 1000 MHz 100 200 300 400 500 700 1000 f, FREQUENCY(MHz) FIG.3 Rectangular Form yrb, REVERSE TRANSFER ADMITTANCE(mmhos) 5.0 4.0 jb rb(mmhos) 0 FIG.4 Polar Form gfb(mmhos) 100 200 400 3.0 -b rb 2.0 1.0 -g rb 0 100 200 300 400 500 f, FREQUENCY (MHz) 700 1000 MHz 700 1000 -2. 0 -1. 8 -1. 2 -0. 8 -0. 4 0 0.4 0. 8 1. 2 1.6 2.0 grb(mmhos) FIG.5 Rectangular Form FIG.6 Polar Form WEITRON http://www.weitron.com.tw MMBTH10 10 yob, OUTPUT ADMITTANCE(mmhos) 9.0 8.0 7.0 6.0 5.0 4.0 3.0 2.0 1.0 0 100 200 300 400 gob 500 700 1000 bob j bob(mmhos) 10 8.0 700 6.0 1000 MH z 4.0 400 200 2.0 100 0 0 2. 0 4. 0 6. 0 gob (mmhos) 8. 0 10 f, FREQUENCY(MHz) FIG.7 Rectangular Form FIG. 8 Polar Form WEITRON http://www.weitron.com.tw MMBTH10 SOT-23 Package Outline Dimensions A Unit:mm TOP V I EW B C E G H D K J L M Dim A B C D E G H J K L M Min 0.35 1.19 2.10 0.85 0.46 1.70 2.70 0.01 0.89 0.30 0.076 Max 0.51 1.40 3.00 1.05 1.00 2.10 3.10 0.13 1.10 0.61 0.25 http://www.weitron.com.tw WEITRON |
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